| 摘要 |
<p>The device has a memory cell having a layer configuration in which a conductor layer (6) is provided on an insulator layer 1 min which is provided on a semiconductor region of one conductivity type which constitutes a charge storage region (2) which is in turn provided on a semiconductor region of the opposite conductivity type which provides a charge source region (3). Charge stored in the charge storage region (2) is effective to vary the capacity of a capacitor formed between conductor layer 6 and semiconductor region (3). Charge can be selectively introduced into the charge storage region (2) by an electric signal, so the electric signal can be memorized in the form of a change in capacity of the capacitor, thereby to provide a memory cell.
<??>If the conductor layer (6) is made of a transparent conductive material the memory cell can operate as a sensor cell sensitive to light irradiation. </p> |
