| 摘要 |
A photoelectric conversion device (110) is provided, from the light-receiving surface side, with a first photoelectric conversion unit (1) and a second photoelectric conversion unit (2), in that order. The first photoelectric conversion unit (1) contains, as a light absorption layer (11), a photosensitive material having a Perovskite-type crystal structure represented by the general formula RNH3MX3 or HC(NH2)2MX3. The band-gap of a light absorption layer of the second photoelectric conversion unit (2) is narrower than the band-gap of the light absorption layer (11) of the first photoelectric conversion unit (1). The first photoelectric conversion unit (1) includes, from the light-receiving surface side, a hole transport layer (12), the light absorption layer (11), and an electron transport layer (13), in that order. The product ρt, of the resistivity ρ and the film thickness t of the hole transport layer (12), is at least 0.1 μΩ∙m2. A light-receiving surface transparent conductive layer (3) is provided closer to the light-receiving surface side than the hole transport layer (12). |
