| 摘要 |
PURPOSE:To equalize the emitter current for the semiconductor device and to obtain a mesh emitter type transistor which increases its reliability by inserting a thin film resistor for dispersing a current between the emitter contact unit under a bonding pad and a wiring layer. CONSTITUTION:A P type diffused base and an N<+> type diffused emitter are formed in an N type Si substrate 1, and covered with a surface oxide film 8. A plurality of contact holes 4 are formed at the film 8. A thin film 9 having a resistor under the aluminum wiring layer 5 is so formed that only a series resistor is inserted only into the contact windows 4a, 4b under the bonding pad. A relatively high resistor such as alloy like polysilicon, nichrome or the like is adapted for the thin film 9 having a resistor. Thus, the resistance under the bonding pad is increased, and the breakdown strength is increased to improve the reliability thereof by dispersing the current therethrough. |
