| 摘要 |
PURPOSE:To eliminate the generation of defect in the substrate even if the thermally oxidized film is to be formed after the performation of ion implantation by a method wherein after the ion implantation is performed, the substrate is heat-treated in an inert gas, and it is oxidized at a temperature lower than the heat-treatment temperature in a high pressure oxidizing atmosphere. CONSTITUTION:The Si substrate 11 is irradiated with the ion beam 12 to form an ion-implanted layer 13. The substrate 11 is heat-treated in the inert gas atmosphere, and the implanted impurity is made to diffuse to form an implanted impurity diffusion layer 14. The thermally oxidized film 15 is formed in the ion-implanted region scarcely changing the concentration distribution of the diffused impurity in the depth direction, and moreover the thermal oxidation is so performed as the stacking fault or the dislocation seems to be caused by the ion implantation is limited in the region sufficiently shallow than the depth of the region 14. For that purpose, the thermal oxidation is to be performed in the condition that the process is to be performed in the oxidizing atmosphere having the pressure higher than the air pressure and at a temperature lower than the heat-treatment temperature performed in the inert gas atmosphere. Accordingly the thermally oxidized film can be formed in the ion-implanted region without generating the stacking fault even after the process of ion implantation. |
