| 摘要 |
PURPOSE:To obtain a mask utilizing the difference of etching speed by a method wherein a three-layers film consisting of an organic matter, a metal or an oxide, an organic matter is etched with O2 ion beam. CONSTITUTION:The etching speed of O2 ion beam acting as a reaction gas differs according to the material, and is slow against the metal and the oxide and is exceedingly rapid against the organic matter. Utilizing this quality, the three layers of organic matter-metal or oxide-organic matter are piled up and etching is performed in order to form the mask, and when the material to be processed is etched, the minute pattern can be formed, and moreover the drawing speed of O2 ion beam can be largely elevated than the case of a single layer organic matter mask. |
