| 摘要 |
PURPOSE:To prevent pinholes generated during formation of dielectric layer by forming with amorphous thin film material a lower dielectric layer in which one electrode is covered and the other electrode is installed outside. CONSTITUTION:An X electrode 4 is formed on a glass substrate 1. The first dielectric layer 5 consisting of a vapor deposition film with amorphous materials, such as silica glass, borosilicate glass, etc. is formed on the X electrode 4 and then a Y electrode 6 is formed by the sputtering method. Then the second dielectric layer consisting of Al2O3, MgO, SiO, etc. is formed and a discharge space 3 is also formed by arranging a glass substrate 2. This prevents pinholes generated when the first dielectric layer 7 is formed and increases the withstand voltage between the opposed X and Y electrodes by which this dielectric layer between is sandwiched. |
