| 摘要 |
PURPOSE:To obtain multilayer structure having high reliability, which causes no exposure of a lower layer metallic layer and no short-circuiting accident, by etching an insulating layer for protection at two times, in a method which laminates a plurality of metallic layers selectively on a substrate. CONSTITUTION:An oxide film 21 is formed which contains an Al layer 23 as a lower layer pattern and protects a substrate 20, a photoresist 22 is made up and an opening 24 for connecting an electrode is built up. The oxide film 21 of the opening section is etched, and the Al layer 23 is exposed. The photoresist 22 is removed, the whole surface is coated with a new photoresist 26, a wide opening is built up and the thickness of the wide opening section is thinned by partially removing an oxide film28 of the exposed section according to etching. Titanium-platinum is evaporated leaving the photoresist 26 as it is attached under this condition, and an upper electrode 29 connected to the lower layer Al layer 23 is formed. Titanium- platinum on the photoresist is removed together with the photoresist 26, and the desired laminated wiring layer is made up. |
