发明名称 INSIDE MATCHING TYPE SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To obtain an FET having high output by mutually wiring each electrode having the capacity of a concentrated constant of input and output matching circuits by an inductor of the concentrated constant by a metallic small wire having high impedance formed on the same high dielectric substrate as the electrodes. CONSTITUTION:The electrodes 8, 12 having the capacity of the concentrated constant are wired mutually by the narrow metallic wires 11' shaped on the same high dielectric substrate 7, and the electrodes 10, 14 having the capacity of the concentrated constant are wired mutually by the metallic wires 13' similarly. When the thickness is sufficiently narrower than the thickness of the substrate and the length is shorter than a wavelength used in the wires 11', 13', the wires are equivalent to the inductor of the concentrated constant. According to this constitution, the metallic wires 11', 13' can be formed minutely in phototype process, an assembling process is simplified remarkably, the desired inductance value can accurately be realized in excellent reproducibility, and the productivity of the device having high output, the inside thereof is matched, is improved.
申请公布号 JPS5712540(A) 申请公布日期 1982.01.22
申请号 JP19800088136 申请日期 1980.06.26
申请人 MITSUBISHI ELECTRIC CORP 发明人 MITSUI YASUROU;OOTSUBO CHIKAYUKI;NAKATANI MASAAKI
分类号 H01L23/12;H01L23/66 主分类号 H01L23/12
代理机构 代理人
主权项
地址