| 摘要 |
PURPOSE:To reduce a leakage currnt to flow in the buffer layer of a semiconductor device to zero by a method wherein either side of regions of source electrode and drain electrode is surrounded with a gate electrode and the extended part of the gate electrode making Schottky contact with the buffer layer. CONSTITUTION:The extended part 11 of the gate electrode region 1 is formed surrounding the outside of the lead out part 3' of the drain region 3. Because the extended part 11 forms Schottky contact with the buffer layer 5, a depletion layer 7 is formed right under the extended part 11 penetrating the buffer layer 5. Because the extended part 11 sourrounds the outside of the lead out part 3' of the drain electrode 3 without a break, the depletion layer 7 also surrounds the outside of the buffer layer 5 in the lower layer of the lead out part 3' without a break to cut off the outer circumference of the drain electrode region from the other part. Accordingly the path of leakage current between the source 2, drain 3 regions through the buffer layer 5 is wholly cut off to make the leakage currnt to zero, and yield of the FET provided on a semi-insulating or an insulating substrate is enhanced. |
