Semiconductor integrated circuit incorporating an active device and a distributed resistor-capacitor device.

摘要

A distributed resistor-capacitor device which is highly reproducible with near ideal electrical characteristics comprises a doped semiconductor body forming a substrate (108), an insulative layer (104) on a major surface of the substrate, and a doped polycrystalline semiconductor material (102) on the insulating layer. The polycrystalline layer (102) is the resistor and co-operates with the substrate as the capacitor. The device is incorporated in an integrated circuit together with a field-effect transistor (121) or a bipolar junction transistor. The body may comprise a single crystalline silicon substrate with the layer (104) comprising a silicon oxide. The semiconductor material (102) may be polycrystalline silicon.