发明名称 THIN FILM SOLAR CELL
摘要 PURPOSE:To increase an open-circuit voltage of a solar cell and also make its characteristic stabilized thermally by a method wherein a specific material such as CdSnO3-x(0<=x<1) having a composition ratio within a fixed range is used for a transparent electrode of a light input side of the solar cell consisting of a semiconductor thin film. CONSTITUTION:A transparent electrode 12 approximately 2,000Angstrom thick is formed on a transparent substrate 11 made of, for example, glass by means of a sputtering method, and a PIN structure, for instance, amorphous silicon layer 13 is deposited on the electrode 12 by means of a plasma CVD method. Then, an Al electrode 14 is deposited to constitute a solar cell. For the material of this transparent electrode 12, at least one of CdSnO3-x(0<=x<1), Cd2SnO4-x(0<=x<1) and CdSn1-xSbxO4(0<=x<1) is used. With this structure, an output can be increased because the open-circuit voltage can be increased, and also deterioration of the characteristic due to high-temperature processing can be prevented. Application of amorphous silicon for the semiconductor thin film provides large improvement of the characteristic.
申请公布号 JPS5790980(A) 申请公布日期 1982.06.05
申请号 JP19800166885 申请日期 1980.11.27
申请人 SUWA SEIKOSHA KK 发明人 OOTAKE TSUTOMU
分类号 H01L31/04;H01L31/0224 主分类号 H01L31/04
代理机构 代理人
主权项
地址