| 摘要 |
<p>PURPOSE:To suppress the damage of a semiconductor device at the time of dividing a semiconductor wafer by scribing the wafer along a scribing line, then selectively forming an etched groove at the scribing line part and then dividing the wafer. CONSTITUTION:A semiconductor wafer 10 formed with a semiconductor device is shallowly scribed along the center lie of a scribing metal 3. A resist film 7 is formed on a region except the scribing metal 3, with the film 7 as a mask the wafer 10 is selectively etched. Since the etching is advanced along the crack formed at the scribing time, the part applied with stress can be removed. Subsequently, the metal 3 is removed by etching. Eventually, the film 7 is removed, the back surface of the wafer is pressurized to divide the chip. Since the cracks due to the scribing is removed in advance, the chips of the wafer do not scatter at the dividing time.</p> |
