| 摘要 |
PURPOSE:To form a shallow impurity region having homogeneous depth in a substrate by providing the second insulating film having thickness less than 100Angstrom on an aperture part of an oxide film on a substrate, by forming a polycrystalline thin film covering said insulating film and by diffusing impurities through the second insulating film and the polycrystalline Si thin film. CONSTITUTION:An aperture part is provided on an SiO2 film 12 on a substrate 11 selectively. An oxide film 13 with film thickness of 50Angstrom is formed on the aperture part on the substrate by means of a heat treatment. A polycrystalline Si thin film 14 covering said oxide film 13 is formed. Impurities are diffused through said polycrystalline Si thin film 14 and the oxide film 13, and an impurity diffusion region 15 is formed in the substrate. Hereby, a shallow impurity diffusion region having homogeneous depth is formed. |
