| 摘要 |
PROBLEM TO BE SOLVED: To keep a total receding amount of a silicon carbide (SiC) semiconductor layer constant throughout a manufacturing process.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises the steps of: forming a first oxide film on a SiC epitaxial layer 1b; etching the first oxide film by a dry etching method to form a field oxide film 8; subsequently, measuring a receding amount of a surface of the SiC epitaxial layer 1b caused by the etching; and subsequently, forming a sacrificial oxide film or a gate oxide film 9 as a second oxide film on the SiC epitaxial layer 1b. When forming the second oxide film, though the surface of the SiC epitaxial layer 1b recedes, the receding amount is controlled based on the measurement result of the receding amount of the surface of the SiC epitaxial layer 1b due to etching of the first oxide film.SELECTED DRAWING: Figure 3 |
