| 摘要 |
PURPOSE:To obtain a static memory which has low power consumption and a high degree of integration, by arranging elements, each constituted by connecting the anode and P type gate of an SCR to the cathode and anode of a Zener diode, at lattice points of word lines and bit lines. CONSTITUTION:Thyristor type elements, each constituted by connecting the anode of a P gate thyristor 1 to the cathode of a Zener diode 2 and also connecting the P type gate of the thyristor to the anode of the Zener diode, are arranged at lattice points of word and bit lines. The anode of each element is connected to the word line, and the cathode is connected to the bit line through a load resistance 3. Since the turn-on voltage of the element is determined by a Zener voltage value, the characteristics of the element are variable by controlling the Zener voltage value, so that an easily integrated static memory with low power consumption is obtained. |
