| 摘要 |
PURPOSE:To obtain an inexpensive electrical contact material for sealing provided with superior melt-sticking resistance and a superior hardly dissipative property equivalent to those of an Ag-CdO material by adding In2O3 to a Cu- CdO material while regulating it in relation to CdO. CONSTITUTION:This electrical contact material for sealing consists of 0.5- 25wt% CdO, 0.5-25% In2O3 (CdO+In2O3=5-26%) and the balance Cu. This material is obtd. by replacing CdO in a conventional Cu-CdO material with CdO and In2O3. By the restricted composition the coarsening of the grains of the Cu matrix at high temp. is prevented, the mechanical strength of the Cu matrix is enhanced, and the deterioration is prevented. Thus, the dissipation of the material due to the exfoliation of flakes can be prevented, and the melt-sticking resistance is also satisfactory. |
