发明名称 FORMATION OF ZINC OXIDE FILM BY VAPOR PHASE METHOD USING PLASMA
摘要 PURPOSE:To efficiently form ZnO films by transferring a reactive gas generated by vaporizing Zn or a Zn compound to a reaction region with a carrier gas and by depositing vapor of ZnO produced by reacting the reactive gas under induced energy. CONSTITUTION:Substrates 1 are allowed to stand together on a quartz boat 2 in a reaction furnace 3 in large numbers, and a starting substance 4 such as Zn, ZnO or other Zn compound is put in a boat 5 and heated with an electric furnace 10. A reactive gas generated by vaporization is transferred to the reaction region with a carrier gas 14, 15, 16 introduced into the furnace 3 through flowmeters 17, 18, 19. On the other hand, high frequency energy is applied between electrodes 6, 7 from a generation source 8 to supply induced energy to the reaction region. The reactive gas reacts under the induced energy and deposits on the surfaces of the substrates 1 as ZnO.
申请公布号 JPS57123969(A) 申请公布日期 1982.08.02
申请号 JP19810009884 申请日期 1981.01.26
申请人 HANDOUTAI ENERUGII KENKYUSHO:KK 发明人 YAMAZAKI SHIYUNPEI
分类号 C30B25/02;C23C14/08;C23C16/40;C23C16/50;C30B29/16 主分类号 C30B25/02
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