IMPURITY-DOPED DIAMOND AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an impurity-doped diamond having a single crystal structure.SOLUTION: An impurity-doped diamond is arranged by doping diamond with an impurity. The impurity-doped diamond comprises at least one of boron and phosphorus as the impurity, in which the concentration of the impurity is 1×10to 1×10cm-3. The high-concentration impurity-doped diamond can be synthesized over a long length of time suitably by a hot filament CVD method, and it has a single crystal structure. A hole activation rate (effective acceptor density/impurity density) calculated as the ratio of an effective acceptor density measured by a transmission FT-IR, and an impurity density measured by a secondary ion mass spectrometry is 95% or more.SELECTED DRAWING: None