| 摘要 |
PURPOSE:To provide a titled detector of stable operation by forming a Schottky barrier junction electrode on one side and an ohmic junction electrode on the other side with a substrate of a compd. semiconductor single crystal of a high atomic number in-between and making the radiation to be measured incident from the Schottky barrier junction electrode side. CONSTITUTION:When a CdTe single crystal substrate and an electrode metal forms a Schottky barrier junction, the potential distribution as shown in the figure is produced, by which the depletion layer of width Weff is produced. When a radiation is made incident from a Schottky barrier junction electrode 2 side to here, it lost energy therein and free carriers are generated. In an n type element, electrons form many carriers and in a p type, holes from many carriers, of which the carriers generated in the depletion layer Weff are taken to the outside as ionization current I. The free carriers generated in the effective depletion layer Weff are accelerated by the electric field in the depletion layer and arrive at the electrode surface 2, where they generate the ionization current. Since this detector is in accordance with such operation principle, it has high radiation energy absorption efficiency and permits radiation detection without biasing. |
