| 摘要 |
PURPOSE:To permit an Mo/Al two-layer electrode processing by a method wherein an Al and Al-Mo reaction layer is firstly processed by an ion milling method and then the remaining Mo layer is processed by a plasma etching method. CONSTITUTION:As an example, Mo is evaporated as an electrode after forming a magnetic resistance permalloy film and then Al is used as a conductor and evaporated by necessary thickness to form a two-layer electrode. Nex, a photo resist pattern for electrode formation is formed. And then, etching processing is applied to an Al and Al -Mo reaction layer out of the two-layer electrode by an ion milling method used Ar and only Mo is left. Next, plasma etching method is applied to the Mo layer only by leaving the Mo layer. In this way, the ion milling processing is applied to the Al and Al-Mo reaction layer of the Al/ Mo two-layer electrode and the Mo/Al two-layer electrode can be processed by applying the plasma etching to the Mo. |
