| 摘要 |
PURPOSE:To read out an optical signal charge by a charge transfer element, by inputting the optical signal charge detected by a photoelectric converting area, to the charge transfer element. CONSTITUTION:A p type high density area 8 is provided so as to contact with an n<+> diffusion layer 6 being a photoelectric converting part. In the p type high density area, life of a carrier is short and spreading of a depletion layer of p-n junction is also small, therefore, a signal carrier which is photoelectrically converted at a deep place inside of a semiconductor by a light beam of the long wavelength side does not attain to the n<+> diffusion layer 6. Up to the present, lack of uniformity and deterioration of image resolution have been caused mainly by the signal carrier energized at a deep place inside of the semiconductor by a light beam of the long wavelength side, but inconvience of this point is removed by providing the p type high density area 8 so as to contact with the n<+> diffusion layer 6, and a satisfactory characteristic is obtained. Also, the capacity of p-n junction is increased, therefore, the signal holding capacity of the n<+> diffusion layer 6 is elevated. |
