Semiconductor device with combined passive device on chip back side

摘要

Semiconductor chips are described that combine a semiconductor device and a capacitor onto a single substrate such that the semiconductor device and the capacitor are electrically isolated from each other. In one example, a semiconductor chip includes a substrate having a first side and a second side, wherein the second side is opposite the first side. The semiconductor chip further includes a semiconductor device formed on the first side of the substrate and an electrically insulating layer formed on at least a portion of the second side of the substrate. The semiconductor chip further includes a capacitor device formed on at least a portion of the electrically insulating layer on the second side of the substrate, wherein the capacitor device is electrically insulated from the semiconductor device.

主权项

1. A method of manufacturing a semiconductor chip, the method comprising:
forming a semiconductor device on a first side of a substrate; forming an electrically insulating layer on at least a portion of a second side of the substrate, wherein the second side is opposite the first side; forming a passive device on at least a portion of the electrically insulating layer, wherein the passive device is electrically insulated from the semiconductor device; forming a chip carrier including at least a first portion and a second portion, wherein the first portion is electrically isolated from the second portion, and wherein the chip carrier comprises an electrically conductive material; and attaching the first portion of the chip carrier to the passive device.