发明名称 Fin structure and fin structure cutting process
摘要 A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process.
申请公布号 US9524909(B2) 申请公布日期 2016.12.20
申请号 US201514696494 申请日期 2015.04.27
申请人 UNITED MICROELECTRONICS CORP. 发明人 Huang Tong-Jyun;Huang Rai-Min;Tseng I-Ming;Li Kuan-Hsien;Huang Chen-Ming
分类号 H01L29/06;H01L21/8234;H01L21/308;H01L21/02;H01L27/088 主分类号 H01L29/06
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A fin structure, comprising: a substrate having a fin structure area and an isolation area; a first fin structure located in the substrate of the fin structure area; a first bump being one single bump disposed in the substrate of the isolation area beside the first fin structure, wherein the first bump has a height at a range of 100-250 angstroms; and an isolation structure disposed on the substrate beside the first fin structure and the first bump, wherein the first fin structure protrudes from the isolation structure, and the isolation structure covers the first bump.
地址 Hsin-Chu TW