| 摘要 |
PURPOSE:To improve uniformity and reproducibility of a semiconductor element with low sheet resistance and establish efficiently massproduction by diffusion process from a thin film multiple layer containing thin layer with impurity of high density. CONSTITUTION:After a silicon oxide film 2 serving as a first layer thin film containing no diffusion impurity has been formed on N type silicon substrate 1, a paint material 3 containing saturated amount of boron trioxide is formed as a second layer thin film containing diffusion impurity of high density. Ethyl silicate 4 containing no diffusion impurity is coated thereon to form a third layer thin film and further the foregoing thin layer 3 containing diffusion impurity and the ethyl silicate 4 are formed again. Thereafter, a diffusion treatment is achieved within the diffusion furnace while performing heating, thereby and impurity diffusion layer 5 and silicon oxide film 6 are formed on the surface of silicon substrate 1 through the foregoing process. Thereafter, the diffusion layer having a low sheet resistance can be obtained by removing therefrom the oxide film 6. |
