| 摘要 |
PURPOSE:To reduce leaking currents from the side surface of a stripe part, when the embedded type semiconductor laser is constituted by the mesa type stripe part wherein a laser current is flowed and embedded parts on both sides, by forming respective P-N junction of the stripe part and the embedded part separately. CONSTITUTION:On an n type InP substrate 1, an n type InGaAsP active layer 2 and a p type InP clad layer 3 are layered and epitaxially grown in a liquid phase. Mesa etching is performed in the layers 3 and 2 and the substrate, and the stripe part is provided on the substrate. Then, a p type InP embedded layer 4 and an n type InP embedded layer 5 are layered and formed on both sides of the stripe part also by the liquid phase epitaxial growth method so that the surface becomes flush with the surface of the layer 3. The P-N junction is also formed here. Thereafter an electrode is deposited on the surfaces of the layers 3 and 5, and an electrode is deposited on the back surface of the substrate 1. In this constitution, the metallic junction and the electric junction are separated. Even through the side surface of the stripe part is roughened, the built in voltage of the P-N junction generated between the embedded layers becomes high, and the leaking current from the side surface of the stripe part is decreased. |
