| 摘要 |
PURPOSE:To improve the characteristic and reliability of a transistor by forming an emitter by implanting impurity ions of perpendicular direction. CONSTITUTION:An imprutiy is introduced to the surface of an N type Si substrate 1 with an oxidized film 3 as a mask to form a base region 2, and an emitter forming hole is formed at the film 3. After a thin oxidized film 7 is then formed on the surface of the hole, an ion beam is implanted at an incident angle of 90 deg. with respect to the surface of the substrate, and phosphorous is injected. Then, an N<+> type emitter region 5 is formed by thermal diffusion, and a phosphorous glass layer 6 is simultaneously formed on the film 3. Thereafter, a light etching is performed, the phosphorous-doped oxidized film on the surface of emitter is removed, and an emitter aluminum electrode 8 is formed. In this manner, a transistor in which no glass layer is formed on the surface of the wall of the hole of the emitter can be obtained. |
