| 摘要 |
PURPOSE:To enable to electrically and selectively erase a semiconductor memory by forming three electrodes of source and drain electrically connected to polycrystalline silicon, metal material and drain or source in the same conductive type region. CONSTITUTION:The firs electrode 2 is formed of polycrystalline silicon, the second electrode 5 is formed of a metal material, and the third electrode 4 is formed of drain and source electrically connected to the drain or source in the same conductive type region. One of the electrodes 2, 5, 4 is the same potential as all memory cells, and a floating gate 1 of only the cell to which high (low) potential is applied to two electrodes 2, 5 as control electrodes, and low (high) potential is applied to the electrode 4 as rewriting electrode, becomes high (low) potential. In this manner, charge is communicated with the electrode 4, and the stored content is rewrittn electrically and selectively. |
