| 摘要 |
<p>A junction short-circuiting-type programmable read-only memory (PROM) device comprises a plurality of striped buried layers (12) with a plurality of striped collector regions (13) on them. A plurality of base regions (15-0 to 15-5) are arranged in a row, with one in each of the collector regions, and, in addition, an emitter region (16-0 to 16-5) is arranged in each base region. Further, in each of the collector regions, a plurality of high impurity regions (17'-1 to 17'-3) of the same conductivity type as that of the collector region are formed to connect the collector region to the word lines and each base region is connected to a bit line. One of the high impurity regions are provided for each two base regions which avoids variations in the separation of the memory cells and the collector connections and consequent variations in the write-in current, and, in addition, decreases the resistance between the emitter and collector so that the area of the memory cells can be reduced with a consequent increase in the integration density of the memory device.</p> |
