| 摘要 |
PURPOSE:To acquire a semiconductor integrated circuit device which can prevent deterioration of current amplification coefficient in the low current region by once removing the oxide film of a low voltage, low current circuit and by newly allowing an oxide film in the low surface level charge to grow. CONSTITUTION:After the oxide film 9 having a large surface level charge Qss is formed on the semiconductor base material, the oxide film 9 on the low voltage, small current circuit A is removed and then the oxide film 9 having a low Qss is newly formed. The high voltage, large current circuit B is oxidized by the method other than the oxidation by halogen compound. In the case of a low voltage, small current circuit A for which a drop of current amplification coefficient beta in the low current region becomes a problem, the oxide film 9' having low Qss using the halogen compound is grown up. Thereby, the current amplification coefficient in the small current region A of the low voltage, small current circuit can be improved and simultaneously an adverse effect such as the channel leak of the high voltage, large current circuit B due to the polarization of Cl<-> ion fetched into the oxide film during the oxidation process by the high electric field can be prevented since the oxide film consisting of the compound other than the halogen compound is formed on the high voltage, large current circuit B. |
