Exposure method utilising an energy beam.

摘要

According to the present invention, a simplified process is provided for drawing a picture pattem and an alignment pattern on a substrate at a scaling fact a by utilising an energy beam exposure device. According to the invention, a scale conversion of 1/a is first applied to the alignment mark patterns. The parameters of the exposure device such as beam diameter, beam scanning interval, beam scanning deflection amplitude, frequency division factor, and displacement velocity are altered in accordance with the desired scaling factor α. The chip pattern data and the altered alignment mark data are then utilised together for drawing the pattern of the substrate without need for readjustment during the drawing process.