| 摘要 |
<p>A semiconductor memory device such as a metal-insulator semiconductor random access memory device comprises an input/output circuit having an input circuit portion (IDB) which receives input data and supplies it to a pair of data buses (DB, DB) and an output circuit portion (OPC) which amplifies signals from the pair of data buses (DB, DB) and provides output signals, and a detection circuit (CKG, G8) for detecting a change in an input address signal, the detection circuit generating an inhibit pulse (INH) having a predetermined pulse width when the input address signal changes. The input circuit portion (IDB) of the input/output circuit operates to inhibit the writing in of data during generation of the inhibit pulse (INH) even if the write-enable signal (WE) is supplied to the memory device and operates in accordance with the write-enable signal (WE) when the inhibit pulse (INH) is not generated. This prevents erroneous write-in of data occurring during switching of the address signal but, at the same time prevents the continual switching of the output transistors (Q11, Q12) of the input/output circuit and thereby increases the writing speed of the device.</p> |
