| 摘要 |
PURPOSE:To obtain good quality semiconductor crystal at a low cost in a short time, by forming polycrystal previously which are superior in the specific crystal orientation by a plasma decomposition method using high frequency on a substrate, when growing a semiconductor thin film on the glass amorphous substrate. CONSTITUTION:A polycrystalline Ge thin film crystal 2 having orientation (110) in superiority is formed by plasma decomposition method using high frequency discharge of GeH4 on the surface of the substrate 1 constituted of an amrophous body of SiO2, quartz, etc. Thereat, it is grown under the condition that the temperature of the substrate 1 is 380-400 deg.C, the partial pressure of GeH4 is 0.5-1.0Torr, the high frequency power is 200W and the film thickness is 3,000-8,000Angstrom . Thus, the Ge crystal which is superior only in the orientation (110) is obtained, and accordingly the condition that various crystal orientations are mixed is eliminated. Thereafter, while the substrate 1 is heated to 700 deg.C by using{Ca(CH3)3}, AsH3, H2, etc. as normal, the GaAs single crystal layer 3 is deposited on the crystal 2. |
