Semiconductor devices with non-implanted barrier regions and methods of fabricating same

摘要

An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and a p-type junction barrier region on the silicon carbide layer. The p-type junction barrier region includes a p-type polysilicon region forming a P-N heterojunction with the drift region, and the p-type junction barrier region is electrically connected to the contact.

主权项

1. An electronic device comprising:
a silicon carbide layer including an n-type drift region therein; a contact forming a Schottky junction with the drift region; and a p-type junction barrier region on the silicon carbide layer; wherein the p-type junction barrier region comprises a p-type polysilicon region forming a P-N heterojunction with the drift region; wherein the p-type junction barrier region is electrically connected to the contact; the electronic device further comprising: a plurality of guard rings at a surface of the silicon carbide layer laterally adjacent to the contact, wherein the plurality of guard rings comprise a plurality of second p-type polysilicon regions on the drift region, the second p-type polysilicon regions being electrically isolated from the contact under zero bias conditions; and a junction termination region at the surface of the silicon carbide layer having a conductivity type opposite the conductivity type of the drift region; wherein the plurality of second p-type polysilicon regions contact the junction termination region.