发明名称 |
Semiconductor package device and manufacturing method thereof |
摘要 |
A semiconductor device includes a die, a pad disposed on the die and configured to be electrically coupled with a bump through a conductive trace attached on the pad, a polymer disposed over the die and patterned to provide a path for the conductive trace passing through, and a molding surrounding the die and the polymer. A top surface of the molding is substantially in a same level as a top surface of the polymer. Further, a method of manufacturing a semiconductor device includes providing a die, forming a pad on the die, disposing a first polymer over the die, patterning the first polymer with an opening over the pad, disposing a sacrificial layer over the patterned first polymer, disposing a molding surrounding the die, removing a portion of the molding thereby exposing the sacrificial layer, removing the sacrificial layer thereby exposing the pad and the first polymer, disposing a second polymer on the first polymer, patterning the second polymer with the opening over the pad, and disposing a conductive material on the pad within the opening. |
申请公布号 |
US9466581(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201314057539 |
申请日期 |
2013.10.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Liu Nai-Wei;Hung Jui-Pin;Lin Jing-Cheng |
分类号 |
H01L23/31;H01L23/00;H01L23/538;H01L23/498 |
主分类号 |
H01L23/31 |
代理机构 |
WPAT, P.C., Intellectual Property Attorneys |
代理人 |
WPAT, P.C., Intellectual Property Attorneys ;King Anthony |
主权项 |
1. A semiconductor device, comprising:
a die; a pad disposed on the die and configured to be electrically coupled with a bump through a conductive trace attached on the pad; a passivation disposed over the die and a portion of the pad; a polymer disposed over the passivation and patterned to provide a path for the conductive trace passing through; a molding surrounding the die and the polymer, wherein a top surface of the molding is substantially in a same level as a top surface of the polymer, and the molding includes a protruded portion disposed over a top surface of the passivation. |
地址 |
Hsinchu TW |