发明名称 |
Vertical semiconductor device having a non-conductive substrate and a gallium nitride layer |
摘要 |
The present invention discloses a vertical semiconductor device and a manufacturing method thereof. The vertical semiconductor device includes: a substrate having a first surface and a second surface, the substrate including a conductive array formed by multiple conductive plugs through the substrate; a semiconductor layer formed on the first surface, the semiconductor layer having a third surface and a fourth surface, wherein the fourth surface faces the first surface; a first electrode formed on the third surface; and a second electrode formed on the second surface for electrically connecting to the conductive array. |
申请公布号 |
US9466552(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201213436665 |
申请日期 |
2012.03.30 |
申请人 |
RICHTEK TECHNOLOGY CORPORATION |
发明人 |
Chiu Chien-Wei;Huang Tsung-Yi |
分类号 |
H01L29/24;H01L21/331;H01L21/329;H01L23/48;H01L29/66;H01L29/732;H01L29/739;H01L29/872;H01L29/20 |
主分类号 |
H01L29/24 |
代理机构 |
Tung & Associates |
代理人 |
Tung & Associates |
主权项 |
1. A vertical semiconductor device, comprising:
a silicon carbide substrate or a sapphire substrate having a first surface and a second surface facing opposite directions; a conductive array formed by a plurality of conductive plugs which extend from the first surface completely through the substrate to the second surface; a semiconductor layer formed on and in contact with the first surface, the semiconductor layer having a third surface and a fourth surface facing opposite directions, wherein the fourth surface faces the first surface; a first electrode formed on and in contact with the third surface; and a second electrode formed on and in contact with the second surface, for electrically connecting to the conductive array, wherein the semiconductor layer includes: a GaN layer doped with first conductive type impurities; a base region doped with second conductive type impurities, the base region being formed in the GaN layer and electrically connected to the first electrode; and an emitter region doped with first conductive type impurities, the emitter region being formed in the base region and electrically connected to a third electrode which is formed on the third surface; wherein the first electrode, the semiconductor layer, the third electrode, the conductive array, and the second electrode form a vertical bipolar junction transistor (BJT). |
地址 |
Chupei, Hsin-Chu TW |