发明名称 |
Method and apparatus for direct formation of nanometer scaled features |
摘要 |
An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a diameter on the scale or 10 nm or less. By moving the tips above the surface of a workpiece in the presence of reactants, features can be directly formed on the workpiece on a sub-micron size, below the resolution of current photolithography. The features may be etched into a workpiece, or formed thereover. |
申请公布号 |
US9466500(B2) |
申请公布日期 |
2016.10.11 |
申请号 |
US201414487356 |
申请日期 |
2014.09.16 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
Mack James Francis;Moffatt Stephen |
分类号 |
H01B13/00;H01L21/306;C23C16/455;H01J37/32;H01L21/02;H01L21/762;H01L21/768;H01L21/3065;H01L21/67;H01L21/68;H01L21/285;C23C16/04 |
主分类号 |
H01B13/00 |
代理机构 |
Patterson & Sheridan, LLP |
代理人 |
Patterson & Sheridan, LLP |
主权项 |
1. A method of forming a tip plate useful for the direct formation of features on a workpiece, comprising;
providing a substrate; forming a plurality of interconnects terminating therein; forming a plurality of transistors on or in the substrate, and connecting a source or drain of a transistor of the plurality of transistors to an interconnect of the plurality of interconnects; and pattern etching the substrates to form tips having an alignment such that an individual tip is formed over each interconnect. |
地址 |
Santa Clara CA US |