Photolithographic methods of producing structures in radiation-emitting semiconductor components

摘要

A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor layer sequence, applying a first photoresist layer to the semiconductor wafer, providing a mask, and arranging the mask relative to the coated semiconductor wafer, exposing the first photoresist layer and imaging the mask in the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at another position different from a first position and again exposing the first photoresist layer and imaging the mask in the first photoresist layer or applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position, and exposing the second photoresist layer and imaging the mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer.

主权项

1. A photolithographic method of producing a structure in a radiation-emitting semiconductor component comprising:
providing a semiconductor wafer comprising a semiconductor layer sequence to form the radiation-emitting semiconductor component, applying a first photoresist layer to the semiconductor wafer, providing a mask comprising a plurality of mask elements, arranging the mask relative to the coated semiconductor wafer at a first position, exposing the first photoresist layer and imaging the mask in the first photoresist layer, applying a second photoresist layer to the first photoresist layer, arranging the mask or a different mask relative to the semiconductor wafer at a second position different from the first position, and exposing the second photoresist layer and imaging the mask or the different mask in the second photoresist layer, forming a patterned photoresist layer and patterning the semiconductor wafer by the patterned photoresist layer, wherein a plurality of structure elements are formed at the semiconductor wafer, and a greatest distance between the structure elements is less than a greatest distance between the mask elements, and the structure elements produced by the first photoresist layer have a smaller height than the structure elements produced by the second photoresist layer, and singulating the semiconductor wafer into a plurality of radiation-emitting semiconductor components each having a structure comprising a plurality of structure elements.