| 摘要 |
PURPOSE:To form the contact hole pattern having no deterioration in yield rate and reliability for the titled semiconductor device by a method wherein the pattern is microscopically formed taking advantage of the combinational use of the isotropic etching process and an anisotropic etching process to be performed on the insulating film which will be adhered to the surface of a semiconductor substrate. CONSTITUTION:The contact hole to be provided on an insulating film is formed as follows. A photoresist film 3, to be used as a protective film when an etching is performed on the surface of the insulating film 2 which will be adhered to the surface of a semiconductor substrate, is formed, a working is performed on a photoresist film 3 through a photoresist process, an isotropic etching is performed as far as to the midway of the film thickness of the insulating film 2 using the photoresist film 3 as a protective film, and then the insulating film 3 is completely removed by performing an anisotropic etching process using the photoresist film 3 as a protective film in the same manner as above. As a result of the conbinational use of said two processes, a stepping is formed in the shape of contact hole provided on the insulating film 2, and a gentle-sloped taper is formed. |
