| 摘要 |
In a semiconductor photodetector formed as a monolithic structure comprising regions (30, 31, 32) having mutually differing light absorption properties, an absorbing region (30) and a photoresponsive portion (31, 32) are separated by a diffusion barrier (30.5) in the form of a zone, layer or boundary surface constituting a bar to diffusion of minority charge carriers. The photoresponsive portion may comprise a P-N junction, Schottky diode or MOS structure, and the absorbing region (30) may be a filter region. <IMAGE> |
