| 摘要 |
PURPOSE:To offer a reading device with fast photo-response speed, less dispersion of sensibilities among elements, long-period stability and easy manufacture method thereof. CONSTITUTION:The reading element 9 is constituted of the lower metallic electrode 5 formed on an insulating substrate 8, an amorphous Si layer 6 provided on said lower metallic electrode and the upper clear electrode 7 provided on the amorphous Si layer. The lower metallic electrode is arranged in a plurality to correspond to reading bits. For the material of the lower metallic electrode, Cr-An (double layer), Ni, Al, Cr, Pt, Pd, Mc, Ti, etc. are available. For the formation of the amorphous Si layer, a homogeneous film is formed be a method of plasma CVD, sputter, evaporation, etc., and thereat non-doped one or one formed into an I type layer by doping small amount of hydrogen and a P type layer with doped B and other III group element of a periodic table is appropriate. For the upper transparent electrode 7, an ITO film (In2O3+SnO2) is used, and the ratio between In2O3 and SnO2 is suitably selected. The thickness of this ITO film is suitable in approx. 500-2,000Angstrom . |
