| 摘要 |
PURPOSE:To obtain the semiconductor laser oscillating in a single axis mode by forming a groove in the longitudinal direction of the resonator of the first clad layer adjoined to a substrate and shaping the laser in form with at least one or more of uneven stepped difference in a region except a section in the vicinity of both end surfaces of the length of the resonator. CONSTITUTION:The high resistance insulating Al0.3Ga0.7As clad layer 11 and a SiO2 film 12 are attached onto the N-GaAs substrate 10, a striped window, a central section thereof has a consticted part, is bored to the SiO2 film, and the V-shaped groove, a central section thereof is shallow, is shaped through etching. The SiO2 film 12 is removed, and an N-Al0.3Ga0.7As clad layer 13, an undoped GaAs active layer 14 and a P-Al0.3Ga0.7As clad layer 15 are grown. A SiO2 film 16 is attached onto the clad layer 15, a widow is bored, Zinc is diffused up to its midway in the clad layer 15, and a zinc diffusion region 17 is formed. P type ohmic contacts 18, 19 are attached to the window section, and an N type ohmic contact 20 is shaped at the substrate side. |
