| 摘要 |
PURPOSE:To obtain a photosensitive picture elements of IC construction in the horizontal direction of an image pickup device, to suppress blooming, and to improve resolving power, by providing a discharging means for excessive charge of a photodiode in the thickness direction of a substrate. CONSTITUTION:A substrate 21 as an n type drain area is coated with the 1st SiO2 film 22 and ions are injected selectively into the surface of the substrate 21 to form a p<+> type semiconductor layer 23 as a p type semiconductor substrate except in an n type channel semiconductor area 24'. The layer 23 is diffused in both depth and lateral directions by a high-temperature treatment to form a p type semiconductor substrate 25, n type drain area 26, and area 24'. Further, phosphorus ions are injected into the area 24' and the surface of the substrate 25 near the front end part of the area 24' to form an n type island- shaped semiconductor area 27. Then, phosphorus ions are injected into the surface of the substrate 25 to form an n type buried channel area 28, and further a p<+> type channel stopping area 29 is formed in outward directions of the areas 27 and 28. Then, a discharging means for excessive charge of a photodiode is provided in the thickness direction of the substrate to improve resolving power. |
