GALLIUM ARSENIDE INTEGRATED CIRCUIT

摘要

PURPOSE:To increase the speed of operation by flowing all currents in the direction vertical to a (011) face in the GaAs-MES-FET. CONSTITUTION:A plurality of Schottky barrier junction gate type field-effect transistors (GaAs-MES-FET) are formed onto the (100) face 30 of a semi-insulating GaAs substrate. Each FET element is constituted by a source electrode, a drain electrode and a gate electrode formed onto an n type GaAs crystal. The gate electrodes 33, 34 are formed in parallel with a (011) face 31. According to such constitution, all currents flow in the direction vertical to the (011) face, and the source resistance of several transistor is reduced, thus increasing the speed of operation.