| 摘要 |
PURPOSE:To perform a high accuracy and high speed treatment, by constituting so that the maximum value of amounts of the signal charge generated by photo sensitive picture elements is detected non-destructively, and then the time until the detected voltage reaches the set maximum voltage is determined as an integral time. CONSTITUTION:If a P type is used as a semiconductor substrate, and the signal charge flowing in is the electron, the potential of an accumulation electrode 121 decreases more than a DC voltage value E6 the set potential, and the amount of the potential variation thereof is proportional to the total amount of the signal charge flowing into a depletion layer under an electrode 121. On the other hand, since a gate electrode 161 is connected common to this accumulation electrode 121, the potential of said gate electrode 161 likewise causes the drop of the voltage proportional to the total amount of the signal charge flowing into the depletion layer under the accumulation electrode 121. The same thing is true to combinations of an accumulation electrode 122 and a gate electrode 162, and an accumulation electrode 123 and a gate electrode 163. |
