| 摘要 |
PCT No. PCT/JP80/00276 Sec. 371 Date Jul. 2, 1981 Sec. 102(e) Date Jul. 2, 1981 PCT Filed Nov. 6, 1980 PCT Pub. No. WO81/01484 PCT Pub. Date May 28, 1981.The present invention discloses a semiconductor memory device composed of double gate type field effect transistors which have control gate and floating gate for accumulating charges. The conditions for optimum charge injection writing and for optimum reading of this semiconductor memory device are mutually inconsistent. In order to satisfy said two conditions, the present invention provides a charge injection transistor and a read transistor, wherein the floating gate of both transistors are electrically connected, the control gates are connected to a first signal lines, the drains are connected respectively to the different second and third signal lines and the sources are grounded.
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