| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method and a plasma etching device, which can inhibit non-uniform etching.SOLUTION: A semiconductor element manufacturing method of the present embodiment comprises a first etching step and a second etching step. In the first etching step, an etching gas is supplied to the inside of a plasma generation space to produce plasma; and first power is applied to a base 51 to etch a semiconductor substrate K. In the second etching step, second power lower than the first power is applied to the base after the first etching step to etch the semiconductor substrate K. In addition, in the second etching step, a diluent gas is supplied to a circumference of the semiconductor substrate K by a dilution device 8.SELECTED DRAWING: Figure 1 |
