| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which parasitic capacitance is reduced.SOLUTION: A semiconductor device comprises on a substrate, a first insulation layer, a first oxide insulator, an oxide semiconductor, a second oxide insulator, a gate insulation layer, a gate electrode layer, a source electrode layer and drain electrode layer and a second insulation layer. The oxide semiconductor has a first region through a fifth region: the first region has a region overlapping the source electrode layer; the second region has a region overlapping the drain electrode layer; the third region has a region overlapping the gate electrode layer; the fourth region is a region between the first region and the third region; the fifth region is a region between the second region and the third region; the fourth region and the fifth region each have a region having an element N (N is hydrogen, nitrogen, helium, neon, argon, krypton or xenon), and a perpendicular distance between a top face of the substrate and a top face of the second insulation layer is shorter than a perpendicular distance between the top face of the substrate and the source electrode layer or between the top face of the substrate and a top face of the drain electrode layer.SELECTED DRAWING: Figure 1 |
