发明名称 |
Organic light-emitting diode with doped layers |
摘要 |
The invention concerns an organic light-emitting diode comprising a lower electrode (2) and an upper electrode (8), an electroluminescent organic layer (5), and at least one doped organic layer (3; 7) in contact with one of said electrodes. The invention is characterized in that the doping is carried out using an alkaline-earth element or lanthanide, and the diode is heat-treated at temperature preferably not less than 60° C. for more than one hour. The invention enables the lighting performance of the diode to be considerably improved. |
申请公布号 |
US9496499(B2) |
申请公布日期 |
2016.11.15 |
申请号 |
US200611884837 |
申请日期 |
2006.02.21 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
Cina Salvatore;Doyeux Henri;Vaufrey David;Bettinelli Armand |
分类号 |
H01L51/00;H01L51/50 |
主分类号 |
H01L51/00 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A method for realizing a diode comprising:
providing a substrate with a cathode electrode; depositing a layer of bathophenanthroline-based organic material doped with calcium in contact with the cathode electrode, the doping level of calcium being higher at the interface of the bathophenanthroline-based organic material and the cathode electrode than it is at the center of the layer of bathophenanthroline-based organic material; depositing a light-emitting organic layer on the bathophenanthroline-based organic material; depositing an anode electrode on the light-emitting organic layer; and after depositing the electrodes and layers, performing a thermal treatment at a temperature greater than or equal to 80° C. |
地址 |
Paris FR |