Semiconductor devices with dummy gate structures partially on isolation regions

摘要

One illustrative method disclosed herein includes removing the sidewall spacers and a gate cap layer so as to thereby expose an upper surface and sidewalls of a sacrificial gate structure, forming an etch stop layer above source/drain regions of a device and on the sidewalls and upper surface of the sacrificial gate structure, forming a first layer of insulating material above the etch stop layer, removing the sacrificial gate structure so as to define a replacement gate cavity that is laterally defined by portions of the etch stop layer, forming a replacement gate structure in the replacement gate cavity, and forming a second gate cap layer above the replacement gate structure.

主权项

1. A device, comprising:
an isolation region positioned in a semiconductor substrate that defines an active region in said semiconductor substrate; a gate structure having a lateral width and opposing first and second sidewalls, wherein a first portion of said lateral width of said gate structure is positioned above and in direct contact with said isolation region and a second portion of said lateral width of said gate structure is positioned above said active region; an L-shaped liner layer positioned on said isolation region and on and in direct contact with said first sidewall of said gate structure; and a sidewall spacer positioned above said active region and on said second sidewall of said gate structure.