Photodiode array module and method for manufacturing same

摘要

A first semiconductor substrate 1 and a second semiconductor substrate 2 are different in material, and therefore have sensitivities to incident light of mutually different wavelength bands. Respective photodiodes of photodiode arrays are connected to amplifiers of the first semiconductor substrate 1. According to this method, the second semiconductor substrate 2 is separated from the wafer by etching the second semiconductor substrate 2 and then dicing a deepest portion of the etched groove. The density of crystal defects in a side surface produced by etching is smaller than the density of crystal defects in a side surface produced by dicing. Because a photodiode located in an end portion of the second semiconductor substrate 2 does not need to be removed, a reduction in the number of photodiodes can be suppressed.

主权项

1. A photodiode array module comprising:
a first semiconductor substrate formed with a plurality of amplifiers, made of a first semiconductor material; and a second semiconductor substrate adhered to the first semiconductor substrate, made of a second semiconductor material different from the first semiconductor material, wherein the first semiconductor substrate has a first photodiode array, the second semiconductor substrate has a second photodiode array at a side of a surface opposed to the first semiconductor substrate, a first group of a plurality of the amplifiers provided on the first semiconductor substrate via a first wiring group, each amplifier of the first group of plurality of amplifiers being individually electrically connected to a respective photodiode of the first photodiode array, a second group of a plurality of the amplifiers provided on the first semiconductor substrate via a second wiring group and bumps respectively provided on the second wiring group, each amplifier of the second group of plurality of amplifiers being individually electrically connected to a respective photodiode of the second photodiode array, in the second semiconductor substrate, an end portion close to the first photodiode array side has a stepped portion, the stepped portion has: a first side surface and a second side surface along a thickness direction of the second semiconductor substrate; and a terrace surface located at a boundary between the first side surface and the second side surface and opposed to the first semiconductor substrate, each of the photodiodes composing the second photodiode array includes: a semiconductor region of a first conductivity type; and a pixel region of a second conductivity type located at a surface layer side of a surface of the second semiconductor substrate opposed to the first semiconductor substrate, a depth of the terrace surface from an opposing surface of the second semiconductor substrate to the first semiconductor substrate is deeper than a depth of the pixel region of the second photodiode array, the first side surface is closer to the first semiconductor substrate than the second side surface, and a crystal defect density in the first side surface is lower than a crystal defect density in the second side surface.